Low-energy sputtering yield of the (111) and (1̄1̄1̄) faces of GaAs
1973; American Institute of Physics; Volume: 44; Issue: 11 Linguagem: Inglês
10.1063/1.1662120
ISSN1520-8850
AutoresC. Burleigh Cooper, R.G. Hart, James C. Riley,
Tópico(s)Semiconductor materials and devices
ResumoThe sputtering yields of the (111) and (1̄1̄1̄) faces of a GaAs crystal under normal bombardment by 100-eV Ar+ ions were measured by target weight loss. The yield for the (111) face was found to be 0.169 molecules/ion and for the (1̄1̄1̄) face about 6% less.
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