Portal de Periódicos da CAPES

Photoconductivity and photovoltaic effect in indium selenide

1983; American Institute of Physics; Volume: 54; Issue: 2 Linguagem: Inglês

10.1063/1.332050

1520-8850

A. Segura, J. P. Guesdon, J. M. Besson, A. Chévy,

Phase-change materials and chalcogenides

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p-n junctions, bismuth/p-type InSe, platinum/n-type InSe, and indium tin oxyde (ITO)/p-type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.