ZnO single nanowire-based UV detectors
2010; American Institute of Physics; Volume: 97; Issue: 2 Linguagem: Inglês
10.1063/1.3464287
ISSN1520-8842
AutoresSachindra Nath Das, Kyeong-Ju Moon, Jyoti Prakash Kar, Ji‐Hyuk Choi, Junjie Xiong, Tae Il Lee, Jae-Min Myoung,
Tópico(s)Ga2O3 and related materials
ResumoIn this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.
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