Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devices
2005; Wiley; Volume: 2; Issue: 3 Linguagem: Inglês
10.1002/pssc.200460606
ISSN1862-6351
AutoresWojtek J. Walecki, Kevin Lai, Vitalij Souchkov, Phuc Van, S. H. Lau, Ann Koo,
Tópico(s)Semiconductor Lasers and Optical Devices
Resumophysica status solidi (c)Volume 2, Issue 3 p. 984-989 Original Paper Novel noncontact thickness metrology for backend manufacturing of wide bandgap light emitting devices Wojtek J. Walecki, Corresponding Author Wojtek J. Walecki wojtekwalecki@frontiersemi.com Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USAPhone: +1 408 452 8898, Fax: +1 408 452 8898Search for more papers by this authorKevin Lai, Kevin Lai Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorVitalij Souchkov, Vitalij Souchkov Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorPhuc Van, Phuc Van Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorSH Lau, SH Lau Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorAnn Koo, Ann Koo Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this author Wojtek J. Walecki, Corresponding Author Wojtek J. Walecki wojtekwalecki@frontiersemi.com Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USAPhone: +1 408 452 8898, Fax: +1 408 452 8898Search for more papers by this authorKevin Lai, Kevin Lai Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorVitalij Souchkov, Vitalij Souchkov Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorPhuc Van, Phuc Van Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorSH Lau, SH Lau Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this authorAnn Koo, Ann Koo Frontier Semiconductor, 1631 No. 1st St. San Jose CA 95112, USASearch for more papers by this author First published: 16 February 2005 https://doi.org/10.1002/pssc.200460606Citations: 10AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Low coherence optical interferometry (D. Huang et al., Science 254, 1178 (1991) [1]) has been proven to be an effective tool for characterisation of thin and ultra-thin semiconductor Si wafers (W. J. Walecki et al., 3rd International Workshop on Thin Semiconductor Devices – Manufacturing and Applications, Munich, Germany, November 25, 2002; Q. Wang et al., phys. stat. sol. (a) 155, 289 (1996) [2]). Purpose of this paper is to present an extension of this method to characterisation of ultra-thin compound wide bandgap wafers mounted on insulating carriers. We present alternative technique, which does not suffer from above discussed limitations, and can be easily integrated in the production tools, and provide accurate measurement of samples while they are being processed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) Citing Literature Volume2, Issue3February 2005Pages 984-989 RelatedInformation
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