Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
1986; Institute of Physics; Volume: 25; Issue: 6A Linguagem: Inglês
10.1143/jjap.25.l429
ISSN1347-4065
AutoresK. Tone, Takao Nakayama, Hiroyuki Iechi, Kazuyoshi Ohtsu, Hiroshi Kukimoto,
Tópico(s)GaN-based semiconductor devices and materials
ResumoWe report the first growth of selectively doped n-GaInP/GaAs heterostructures by low pressure metalorganic chemical vapor deposition (MOCVD) using trimethylindium, triethylgallium, phosphine and arsine as source materials. The Shubnikov-de Haas oscillation and the temperature dependence of electron mobility indicate that a two-dimensional electron gas is present at the GaInP/GaAs interface. It is noted that the persistent photoconductivity observed in these heterostructures was very weak. These results suggest potential application of this material system to high electron mobility transistors (HEMT).
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