Preparation of copper‐indium sulfide thin films by single‐source OMCVD: Mass‐spectral investigation of decomposition path of the organometallic sources
1992; Wiley; Volume: 6; Issue: 8 Linguagem: Inglês
10.1002/aoc.590060808
ISSN1099-0739
AutoresRyôki Nomura, Yasuharu Seki, Kazuhisa Konishi, Haruo Matsuda,
Tópico(s)Organometallic Compounds Synthesis and Characterization
ResumoAbstract In order to prepare high‐quality CuInS 2 thin films vapor phase decomposition patterns of three copper‐indium binuclear complexes, equation image and equation image as candidates for source materials were investigated using EI MS. The complex 1c showed series of intensive peaks due to the fragmentation of M + . For 1a, only a fragmentation pattern starting from BuIn(S 2 CNBu 2 ) 2 was detectable. This should suggest that 1a decomposed into BuIn(S 2 CNBu 2 ) 2 and copper sulfide before vaporization. In addition an ambiguous feature could be observed for 1b, viz. two fragmentation paths. Consequently, we judge that 1c is a suitable source complex to prepare CuInS 2 thin films via a single‐source OMCVD process. Thus chalcopyrite CuIns 2 thin films were successfully prepared via single‐source OMCVD using 1c as a source complex, with T substrate 400°C, T source 80°C, base pressure 0.7 Torr and carrier (nitrogen) flow rate 0.8 L min −1 . Fragmentation of two copper dithiocarbmates, Cu(S 2 CNBu 2 ) 2 and Cu[S 2 CN(i‐Pr) 2 ] 2 , and two butylindium thiolates, Bu 2 InS(i‐Pr) and BuIn[S(i‐Pr)] 2 , as components of 1 is additionally discussed.
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