Initial growth of insulating overlayers of NaCl on Ge(100) observed by scanning tunneling microscopy with atomic resolution
1996; American Physical Society; Volume: 54; Issue: 11 Linguagem: Inglês
10.1103/physrevb.54.7705
ISSN1095-3795
AutoresK. Glöckler, M. Sokołowski, A. Soukopp, E. Umbach,
Tópico(s)Force Microscopy Techniques and Applications
ResumoThe epitaxial growth start of an insulating NaCl film on a Ge(100) surface was directly imaged by scanning tunneling microscopy. Atomic resolution was achieved for islands of the first NaCl double layer with upright-standing NaCl dipoles. The tunneling current is preferentially determined by occupied Ge states extending into the NaCl layer. The results corroborate and extend the earlier proposed ``carpetlike'' growth mode of the NaCl layer over monoatomic Ge steps, even for small NaCl islands submonolayer coverage. \textcopyright{} 1996 The American Physical Society.
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