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GaN-based waveguide devices for long-wavelength optical communications

2003; American Institute of Physics; Volume: 82; Issue: 9 Linguagem: Inglês

10.1063/1.1557790

1520-8842

Rongqing Hui, Saeed Taherion, Yukun Wan, J. Li, S. X. Jin, J. Y. Lin, H. X. Jiang,

Photonic Crystals and Applications

Refractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed.