Single and double quantum well lasers with a monolithically integrated passive section
1990; American Institute of Physics; Volume: 57; Issue: 8 Linguagem: Inglês
10.1063/1.103428
ISSN1520-8842
AutoresJ. Werner, T. P. Lee, E. Kapon, E. Colas, N. G. Stoffel, S. A. Schwarz, L. C. Schwartz, N.C. Andreadakis,
Tópico(s)Photonic and Optical Devices
ResumoSingle (SQW) and double (DQW) quantum well composite cavity GaAs/AlGaAs lasers with an integrated passive section were fabricated and compared. Si implantation was used for partial quantum well disordering in the passive section. Implanted DQW lasers with a 2.6-mm-long cavity had threshold currents of 26.3 mA compared to 33 mA for implanted SQW lasers. The measured resonant absorption in the passive section showed an exponential roll-off in agreement with Urbach’s law. The characteristic energy E0 associated with Urbach’s law was 6 meV for untreated SQW and DQW lasers and ≊11 meV for implanted SQW and DQW lasers.
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