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Dislocation Content of Micropipes in SiC

1998; American Physical Society; Volume: 80; Issue: 4 Linguagem: Inglês

10.1103/physrevlett.80.740

1092-0145

J. Heindl, W. Dorsch, H. P. Strunk, St.G. Müller, R. Eckstein, Dieter Hofmann, A. Winnacker,

Semiconductor materials and interfaces

Silicon carbide, a potentially powerful device material, suffers from microscopic hollow defects called micropipes. Their nature is not satisfactorily clarified yet. Our analysis shows that they are hollow core dislocations according to Frank's model, but contain dislocations of mixed type.