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LEC SI-GaAs detectors for gamma rays

1994; Elsevier BV; Volume: 348; Issue: 2-3 Linguagem: Inglês

10.1016/0168-9002(94)90790-0

1872-9576

M. Doḡru, S.P. Beaumont, R. Bertin, C.N. Booth, C. M. Buttar, C. Capiluppi, L. Carraresi, F. Cindolo, M. Colocci, F.H. Combley, S. D’Auria, C. Del Papa, M. Edwards, F. Fiori, F. Foster, A. Francescato, R. Gray, G. Hill, Yaonan Hou, P.A. Houston, G. Hughes, B.K. Jones, John Lynch, B. Lisowsky, J. Matheson, F. Nava, Marco Nuti, V. O’Shea, P.G. Pelfer, C. Raine, P. Ratoff, João Santana, I.J. Saunders, P. Seller, Karthik Shankar, P. Sharp, I.O. Skillicorn, T. Sloan, K. Smith, I. Tartoni, I. ten Have, R.M. Turnbull, U. Vanni, A. Vinattieri, A. Zichichi,

Advanced Semiconductor Detectors and Materials

Detectors with a p-i-n structure based on Liquid Encapsulated Czochralski (LEC) grown Semi-Insulating (SI) GaAs have been fabricated. The current-voltage (I–V) characteristics and their response to γ-rays have been studied. Measurements of the peak charge collection efficiency (cce) have been compared with a model assuming a uniform electric field. The comparison indicates that this field is not uniform. The peak cce at 500 V is found to be 52% and 82% in 400 μm and 200 μm thick detectors respectively. The resolution of the 57Co full energy peak is between 10% and 13% at 400 V.