Experimental comparison of atomic roughness and Hall mobility in p -Si inversion layers
1983; American Institute of Physics; Volume: 54; Issue: 11 Linguagem: Inglês
10.1063/1.331878
ISSN1520-8850
Autores Tópico(s)Semiconductor materials and interfaces
ResumoHall mobilities of Si(111) p-channel inversion layers have been measured at temperatures between 4.2 K and room temperature at metal-oxide semiconductors field-effect transistors MOS-FET’s with varying atomic roughness at the Si–SiO2 interface. The atomic roughness was determined on an atomic scale quantitatively with spot profile analysis of a low energy electron diffraction pattern (SPA-LEED). A strong correlation between Hall mobilities at high inversion and atomic roughness is found nearly with a proportionality. Even at room temperature the transistors with the low interface roughness exhibit the higher mobility. Additionally it is observed that the interface charge Qss as derived from Coulomb scattering for low carrier concentration is proportional to the mobility at high carrier concentration and therefore to step atom density, too.
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