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Preparation and characterization of Sb2Se3 thin films by electrodeposition and annealing treatment

2012; Elsevier BV; Volume: 261; Linguagem: Inglês

10.1016/j.apsusc.2012.08.046

1873-5584

Yanqing Lai, Zhiwei Chen, Can Han, Liangxing Jiang, Fangyang Liu, Jie Li, Yexiang Liu,

Phase-change materials and chalcogenides

Antimony selenide (Sb2Se3) thin films were prepared on SnO2 coated glass substrates from acidic aqueous solution by potentiostatic electrodeposition and then post annealed at 300 °C in Ar atmosphere. Cyclic voltammetry (CV), energy dispersive X-ray spectroscopy (EDS), and environmental scanning electron microscope (ESEM) studies were performed on as-deposited Sb2Se3 thin films to obtain suitable electrodeposition conditions. The annealed film shows improved crystallinity with a basic structure of orthorhombic Sb2Se3, and exhibits an optical absorption coefficient of higher than 105 cm−1 in the visible region and an optical band gap of 1.04 ± 0.01 eV. Photoelectrochemical (PEC) tests confirm the p-type conductivity and good photovoltaic conversion characteristics of the annealed film.