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A InGaN/GaN quantum dot green (λ=524 nm) laser

2011; American Institute of Physics; Volume: 98; Issue: 22 Linguagem: Inglês

10.1063/1.3596436

1520-8842

Meng Zhang, Animesh Banerjee, Chi-Sen Lee, J. M. Hinckley, P. Bhattacharya,

ZnO doping and properties

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/cm2. The value of T0=233 K in the temperature range of 260–300 K.