Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
1989; Institute of Physics; Volume: 28; Issue: 12A Linguagem: Inglês
10.1143/jjap.28.l2119
ISSN1347-4065
AutoresH. Asahi, Hitoshi Sumida, Soon Jae Yu, Shūichi Emura, Shun‐ichi Gonda, Masanori Komuro,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoA high-electrical-resistance region as high as 1×10 4 Ω·cm can be formed in Si-doped InP ( n =1×10 18 cm -3 ) layers by 8×10 14 cm -2 Ga focused ion beam (FIB) implantation and 500–600°C annealing. The clear photoresponse is also observed in the Ga-FIB-implanted diode structures after annealing. A drastic carrier concentration decrease and the existence of residual defects are confirmed by Raman scattering measurement.
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