Mechanisms of GaAs growth using tertiarybutylarsine and trimethylgallium
1989; Elsevier BV; Volume: 94; Issue: 3 Linguagem: Inglês
10.1016/0022-0248(89)90091-2
ISSN1873-5002
AutoresC.A. Larsen, S.H. Li, N.I. Buchan, G. B. Stringfellow,
Tópico(s)Advanced Chemical Physics Studies
ResumoTertiarybutylarsine (TBAs) is one of the most promising novel group V sources for organometallic vapor phase epitaxy (OMVPE) of GaAs. The mechanisms of the reactions between TBAs and trimethylgallium (TMGa) were studied in a D2 flow reactor using a time-of-flight mass spectrometer to analyze the products. TBAs decomposition kinetics are not strongly affected by TMGa, but TBAs alters completely the decomposition pathways of TMGa. The three reactions for TMGa removal are: TMGa(ads) + TBAs(ads) → C4H8 + products, (1) TMGa + AsH3 → 3 CH4 + GaAs, (2) TMGa(ads) + 3 AsH(ads) → 3 CH4 + GaAs + As2. (3) The AsH3 and AsH are products of independent TBAs pyrolysis. Reaction (3) is the most important. Another minor reaction proceeds via the formation of gas-phase adducts between TMGa and TBAs. In addition to the experimental data, a numerical model was developed for the system which permits calculation of the rate constants for the reactions. The Arrhenius parameters for the mechanism are given. The results provide insight into the OMVPE process in general.
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