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Technical literature [Reprint of "Field-Effect Transistor Memory" (US Patent No. 3,387,286)]

2008; Institute of Electrical and Electronics Engineers; Volume: 13; Issue: 1 Linguagem: Inglês

10.1109/n-ssc.2008.4785686

1098-4232

R.H. Dennard,

Parallel Computing and Optimization Techniques

Presents a reproduction of Robert H. Dennard's ground breaking patent for one-transistor dynamic random access memory (DRAM) that led to major increases in computer memory density and decreases in cost.