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Temperature-dependent optical properties of wurtzite InN

2003; Elsevier BV; Volume: 20; Issue: 3-4 Linguagem: Inglês

10.1016/j.physe.2003.08.024

1873-1759

Fei Chen, Alexander N. Cartwright, H. J. Lü, W. J. Schaff,

Ga2O3 and related materials

Optical properties and carrier recombination dynamics of a series of InN epilayers, with varying free electron concentrations, grown by molecular beam epitaxy were studied by steady-state photoluminescence (PL) and time-resolved differential transmission spectroscopy. At room temperature strong PL around 0.7eV was observed. Temperature-dependent PL measurements show a redshift of the peak energy and a linear increase of the emission linewidth with temperature. Furthermore, our results demonstrate that room temperature carrier lifetimes are inversely proportional to the free electron concentrations for theses samples. Carrier lifetime as long as 1.3ns was observed in the best quality sample, indicating a highly improved crystalline quality.