The role of the MOS structure in integrated sensors
1983; Elsevier BV; Volume: 4; Linguagem: Inglês
10.1016/0250-6874(83)85063-x
ISSN1873-3050
Autores Tópico(s)Electrochemical Analysis and Applications
ResumoThe basic properties of the MetalOxideSemiconductor (MOS) structure are reviewed with attention to the separation of electrochemical effects from charge-imaging effects. Two basic classes of sensors are identified: chemical sensors, which respond to changes in the chemical potential of a charged species within the gate structure, and charge sensors, which combine the charge-imaging property of the MOS structure with a property-dependent coupling element. The chemical sensors discussed include ion-sensitive field-effect devices, ion-controlled diodes and transition-metal-gate gas sensors. Charge sensors include charge-coupled imaging devices, charge-flow transistors, piezoelectric-gate strain sensors and membrane and/or beam-based capacitors for pressure and acceleration measurement.
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