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Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3

2011; Elsevier BV; Volume: 327; Issue: 1 Linguagem: Inglês

10.1016/j.jcrysgro.2011.06.001

1873-5002

Yuan Bu, Mamoru Imade, Hiroki Kishimoto, Masashi Yoshimura, Takatomo Sasaki, Yasuo Kitaoka, Masashi Isemura, Yusuke Mori,

ZnO doping and properties

Abstract In this study, we investigated the relationship between surface morphology and oxygen concentration in GaN layers synthesized from Ga2O vapor and NH3. The surface morphology of GaN layers changed from rough (with large numbers of pits) to (0 0 0 1) smooth planes with the increase in NH3 concentration. SIMS mapping analysis revealed that the oxygen concentration was on the order of 1017 atoms/cm3, the lowest level obtained in GaN layers synthesized from Ga2O vapor and NH3, at the smooth (0 0 0 1) surfaces. By contrast, high oxygen concentration over 1020 atoms/cm3 was detected at the pitted areas. We concluded that GaN films with low oxygen contamination can be obtained by suppressing pit formation and promoting the smoothness of the (0 0 0 1) surface, even when using Ga2O as the Ga source.