Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
2010; American Institute of Physics; Volume: 96; Issue: 13 Linguagem: Inglês
10.1063/1.3373610
ISSN1520-8842
AutoresM. Schubert, E. Fred Schubert,
Tópico(s)ZnO doping and properties
ResumoThe dwell time of electrons and holes above GaInN/GaN quantum wells is calculated using the k⋅p quantum transmitting boundary method. A long dwell time is an indication for high probability of carrier capture by the quantum well. Conversely, a reduced dwell time indicates that the carrier is likely to be coherently transported across the well. It is shown that sheet charges at GaInN/GaN heterointerfaces and a narrow quantum well lead to significant reductions in carrier dwell time. In addition, carrier capture is discussed in terms of a classical model that is consistent with dwell time calculations.
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