Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructures
1987; American Institute of Physics; Volume: 51; Issue: 15 Linguagem: Inglês
10.1063/1.98723
ISSN1520-8842
AutoresJ.L. Lievin, Clifton G. Fonstad,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoThis letter reports the first reflection high-energy electron diffraction intensity oscillation study of strained, pseudomorphic In1−xGaxAs and In1−yAlyAs grown by molecular beam epitaxy on InP substrates. Strain-induced effects are studied over a broad range (up to 3%) of positive and negative mismatch. During mismatched growth, an abnormal damping of the oscillation intensity is seen which leads to the identification of a threshold thickness above which monolayer by monolayer growth no longer occurs during uninterrupted growth. This thickness is about a factor of 5 smaller than recently calculated and measured values of the critical thickness at which dislocations appear. This observation is believed to have important implications for the growth of pseudomorphic devices.
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