Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism
2014; American Institute of Physics; Volume: 105; Issue: 19 Linguagem: Inglês
10.1063/1.4901747
ISSN1520-8842
AutoresYiren Chen, Hang Song, Hong Jiang, Zhiming Li, Zhiwei Zhang, Xiaojuan Sun, Dabing Li, Guoqing Miao,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoReproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.
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