Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells
2010; American Institute of Physics; Volume: 97; Issue: 21 Linguagem: Inglês
10.1063/1.3517492
ISSN1520-8842
AutoresPeter Cuony, Michael Marending, Duncan T. L. Alexander, Mathieu Boccard, G. Bugnon, Matthieu Despeisse, Christophe Ballif,
Tópico(s)Silicon and Solar Cell Technologies
ResumoLower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (μc-Si), when used as a p-type layer in μc-Si thin-film solar cells. We show that p-nc-SiOx with its particular nanostructure increases μc-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiOx reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases μc-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.
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