Growth of GaN on NdGaO3 substrates by pulsed laser deposition
2002; Elsevier BV; Volume: 407; Issue: 1-2 Linguagem: Inglês
10.1016/s0040-6090(02)00022-6
ISSN1879-2731
AutoresHiroyuki Takahashi, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima,
Tópico(s)Ga2O3 and related materials
ResumoWe have grown GaN on (110) NdGaO3 (NGO) substrates by pulsed laser deposition (PLD) and characterized their structural properties using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), grazing incidence-angle X-ray diffraction and reflectivity (GIXD and GIXR). RHEED and GIXD measurements have revealed that the single crystal hexagonal (112̄0) GaN grows on NGO (110) and its in-plane epitaxial relationship is GaN [0001]//NGO [11̄1]. The lattice mismatches for this alignment in NGO [1̄11] and NGO [11̄1] direction are calculated to be 0.97 and −4.86%, respectively. It is found that the GaN film on NGO (110) is almost fully relaxed in the (112̄0) plane. GIXR measurements revealed that the hetero-interface between GaN and the NGO substrate was steep and its interface roughness was as low as 0.5 nm.
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