Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
2009; Institute of Physics; Volume: 2; Issue: 12 Linguagem: Inglês
10.1143/apex.2.124501
ISSN1882-0786
AutoresMasafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoWe have demonstrated thin body III–V-semiconductor-on-insulator (III-V-OI) n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) on a Si wafer fabricated using a novel direct wafer bonding (DWB) process. A 100-nm-thick InGaAs channel was successfully transferred by the low damage and low temperature DWB process using low energy electron cyclotron resonance (ECR) plasma. The transferred InGaAs-OI nMOSFET on the Si wafer exhibited a high electron channel mobility of 1200 cm2·V-1·s-1, indicating that the present DWB process allows us to form thin III-V-OI channels without serious plasma and bonding damage. This technology is expected to open up the possibility of integrating the ultrathin body III-V-OI MOSFETs on Si platform.
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