Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current
2008; Electrochemical Society; Volume: 12; Issue: 1 Linguagem: Inglês
10.1149/1.3020766
ISSN1944-8775
AutoresKyoung-Seok Son, Tae-Sang Kim, Ji-Sim Jung, Myung-Kwan Ryu, Kyung‐Bae Park, Byung-Wook Yoo, KeeChan Park, Jang‐Yeon Kwon, Sangyoon Lee, Jong‐Min Kim,
Tópico(s)Silicon and Solar Cell Technologies
ResumoEffects of plasma treatments on the back-channel of amorphous (GIZO) thin film transistors (TFTs) are compared for and plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the plasma treatment and the silicon oxide passivation layer.
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