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Thermally assisted flash annealing of silicon and germanium

1978; American Institute of Physics; Volume: 33; Issue: 8 Linguagem: Inglês

10.1063/1.90528

1520-8842

Richard L. Cohen, J. S. Williams, L. C. Feldman, K. W. West,

Silicon and Solar Cell Technologies

The radiant energy from high-intensity xenon flash lamps can be used to anneal damage in semiconductors if the sample is moderately heated before and during the flash. The annealing takes place in air via the solid-phase epitaxy process in <50 μsec and does not alter doping profiles or result in loss of volatile species.