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An investigation of the valence bands of germanium, InSb and GaAs by means of the magnetophonon effect

1977; IOP Publishing; Volume: 10; Issue: 15 Linguagem: Inglês

10.1088/0022-3719/10/15/018

1747-3802

L. Eaves, R A Hoult, R. A. Stradling, S. Askénazy, R. Barbaste, G Carrere, J. Léotin, J. C. Portal, P Ulmet,

Quantum and electron transport phenomena

The exact form of the valence bands in III-V compounds has long been controversial and it is demonstrated that quantitative information concerning the valence band structure can be obtained from the magnetophonon effect. The valence band anisotropy deduced for InSb from the low-field peaks is comparable with that of Ge. For GaAs the heavy hole peaks were interspersed with light hole peaks and were insufficiently numerous to determine the exact valence band anisotropy. The high field peaks of Ge showed a peak splitting and a reduction in anisotropy attributable to the unequal spacing of Landau levels close to the valence band edge which is caused by an admixture of light and heavy hole states. The high-field peaks of InSb showed a similar reduction in anisotropy but no peak splitting. The light hole series in both InSb and GaAs showed an additional peak arising from the admixture of light and heavy hole bands.