Dependence of AlGaN-based SAW oscillator frequency on temperature
2004; Institution of Engineering and Technology; Volume: 40; Issue: 10 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresR. Rimeika, A. Sereika, Paulius Každailis, Q. Fareed, R. Gaška, D. Čiplys, M. S. Shur,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoA SAW delay-line oscillator based on an AlxGa1−xN-on-sapphire structure is presented, and its frequency dependence on temperature has been measured. The temperature coefficient of frequency −69 ppm/K has been found for the AlxGa1−xN layer thickness 1.7 µm, Al molar amount x=0.5, and operation frequency 226 MHz.
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