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Selective growth of InAs quantum dots on patterned GaAs

2005; American Institute of Physics; Volume: 23; Issue: 1 Linguagem: Inglês

10.1116/1.1856464

1520-8567

Tung‐Po Hsieh, Pei-Chin Chiu, Yu‐Chuan Liu, Nien-Tze Yeh, Wen‐Jeng Ho, Jen-Inn Chyi,

Quantum Dots Synthesis And Properties

We report selective growth of InAs self-assembled quantum dots (QDs) on nano-ridges (30–50nm) formed by wet chemical etching and epitaxial growth processes. The QDs formed on the ridges exhibit distinctive characteristics from those on the planar region between the ridges in terms of physical shape as well as optical property. The QDs, which align one by one on the top of the ridges, are of an asymmetric shape along the [011] and [01̱1] directions. By defining the width of ridge and the monolayers of QDs, we are able to control the height and the width of these QDs. Compared to the QDs on the planar region between the ridges, the luminescence from QDs on the ridges exhibits a shorter wavelength, which is attributed to higher compressive strain in these QDs.