High‐Mobility Organic Transistors with Wet‐Etch‐Patterned Top Electrodes: A Novel Patterning Method for Fine‐Pitch Integration of Organic Devices
2014; Wiley; Volume: 1; Issue: 5 Linguagem: Inglês
10.1002/admi.201300124
ISSN2196-7350
AutoresKen‐ichi Nakayama, Mayumi Uno, Takafumi Uemura, Naoko Namba, Yusuke Kanaoka, Tetsuya Kato, Masayuki Katayama, Chikahiko Mitsui, Toshihiro Okamoto, Jun Takeya,
Tópico(s)Nanowire Synthesis and Applications
ResumoAdvanced Materials InterfacesVolume 1, Issue 5 1300124 Communication High-Mobility Organic Transistors with Wet-Etch-Patterned Top Electrodes: A Novel Patterning Method for Fine-Pitch Integration of Organic Devices K. Nakayama, K. Nakayama Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Department of Applied Physics, Graduate School of Engineering, Osaka University, 2–1 Yamadagaoka, Suita, Osaka, 565–0871 JapanSearch for more papers by this authorM. Uno, Corresponding Author M. Uno Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Technology Research Institute of Osaka, 2–7–1 Ayumino, Izumi, Osaka, 594–1157 JapanE-mail: [email protected], [email protected]Search for more papers by this authorT. Uemura, T. Uemura Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorN. Namba, N. Namba Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorY. Kanaoka, Y. Kanaoka Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Technology Research Institute of Osaka, 2–7–1 Ayumino, Izumi, Osaka, 594–1157 JapanSearch for more papers by this authorT. Kato, T. Kato DENSO Corporation, 1 Shindo Takatana-cho, Anjyo, Aichi, 446–8507 JapanSearch for more papers by this authorM. Katayama, M. Katayama DENSO Corporation, 1 Shindo Takatana-cho, Anjyo, Aichi, 446–8507 JapanSearch for more papers by this authorC. Mitsui, C. Mitsui Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorT. Okamoto, T. Okamoto Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorJ. Takeya, Corresponding Author J. Takeya Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Department of Applied Physics, Graduate School of Engineering, Osaka University, 2–1 Yamadagaoka, Suita, Osaka, 565–0871 Japan Technology Research Institute of Osaka, 2–7–1 Ayumino, Izumi, Osaka, 594–1157 JapanE-mail: [email protected], [email protected]Search for more papers by this author K. Nakayama, K. Nakayama Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Department of Applied Physics, Graduate School of Engineering, Osaka University, 2–1 Yamadagaoka, Suita, Osaka, 565–0871 JapanSearch for more papers by this authorM. Uno, Corresponding Author M. Uno Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Technology Research Institute of Osaka, 2–7–1 Ayumino, Izumi, Osaka, 594–1157 JapanE-mail: [email protected], [email protected]Search for more papers by this authorT. Uemura, T. Uemura Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorN. Namba, N. Namba Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorY. Kanaoka, Y. Kanaoka Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Technology Research Institute of Osaka, 2–7–1 Ayumino, Izumi, Osaka, 594–1157 JapanSearch for more papers by this authorT. Kato, T. Kato DENSO Corporation, 1 Shindo Takatana-cho, Anjyo, Aichi, 446–8507 JapanSearch for more papers by this authorM. Katayama, M. Katayama DENSO Corporation, 1 Shindo Takatana-cho, Anjyo, Aichi, 446–8507 JapanSearch for more papers by this authorC. Mitsui, C. Mitsui Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorT. Okamoto, T. Okamoto Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 JapanSearch for more papers by this authorJ. Takeya, Corresponding Author J. Takeya Department of Advanced Material Sciences, Graduate School of Frontier Sciences, The University of Tokyo, 5–1–5 Kashiwanoha, Kashiwa, Chiba, 277–0827 Japan Department of Applied Physics, Graduate School of Engineering, Osaka University, 2–1 Yamadagaoka, Suita, Osaka, 565–0871 Japan Technology Research Institute of Osaka, 2–7–1 Ayumino, Izumi, Osaka, 594–1157 JapanE-mail: [email protected], [email protected]Search for more papers by this author First published: 03 April 2014 https://doi.org/10.1002/admi.201300124Citations: 41Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract A new patterning process of contact electrodes on organic semiconductors is developed to fabricate high-mobility, short-channel organic transistors for high-speed operation. Deposition of gold electrodes on pristine organic films and wet-etching of gold films make it possible to obtain low contact resistance of about 200 Ω cm. The highest cut-off frequency of 19 MHz is demonstrated for p-type transistors. Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description admi201300124-sup-0001-S1.pdf1.3 MB Supplementary Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. References 1M. Jin Kang, I. Doi, H. Mori, E. Miyazaki, K. Takimiya, M. Ikeda, H. Kuwabara, Adv. Mater. 2011, 23. 1222. 2Y. Diao, B. C.-K. Tee, G. Giri, J. Xu, D. H. Kim, H. A. Becerril, R. M. Stoltenberg, T. H. Lee, G. Xue, S. C. B. Mannsfeld, Z. Bao, Nat. Mater. 2013, 12, 665. 3J. Soeda, T. Uemura, T. Okamoto, C. Mitsui, M. Yamagishi, J. Takeya, Appl. Phys. Express 2013, 6, 076503. 4H.Iino JHanna, Adv. Mater. 2011, 23, 1748. 5G. Gelinck, P. Heremans, K. Nomoto, T. D. Anthopoulos, Adv. Mater. 2010, 22, 3778. 6K. Myn, S. Steudel, S. Smout, P. Vicca, F. Furthner, B. van der Putten, A. K. Tripathi, G. H. Gelinck, J. Genoe, W. Dehaene, P. Heremans, Org. Electron. 2010, 11, 1176. 7K. Myny, S. Steudel, P. Vicca, M. J. Beenhakkers, N. A. J. M. van Aerle, G. H. Gelinck, J. Genoe, W. Dehaene, P. Heremans, Solid-State Electron. 2009, 53, 1220. 8Y. Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson, IEEE Electron Device Lett. 1997, 18, 606. 9F. Ante, D. Kälblein, T. Zaki, U. Zschieschang, K.Takimiya, M. Ikeda, T. Sekitani, T. Someya, J. N. Burghartz, K. Kern, H. Klauk, Small 2012, 8, 73. 10J. K. Lee, M. Chatzichristidi, A. A. Zakhidov, P. G. Taylor, J. A. DeFranco, H. S. Hwang, H. H. Fong, A. B. Holmes, G. G. Malliaras, C. K. Ober, J. Am. Chem. Soc. 2008, 130, 11564. 11A. A. Zakhidov, J. K. Lee, J. A. DeFranco, H. H. Fong, P. G. Taylor, M. Chatzichristidi, C. K. Ober, G. G. Malliaras, Chem. Sci. 2011, 2, 1178. 12D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudovc, M. S. Shur, J. Appl. Phys. 2006, 100, 024509. 13C. Bock, D. V. Pham, U. Kunze, D. Käfer, G. Witte, C. Wöll, J. Appl. Phys. 2006, 100, 114517. 14M. Kitamura, Y. Kuzumoto, W. Kang, S. Aomori, Y. Arakawa, Appl. Phys. Lett. 2010, 97, 033306. 15B. Stadlober, U. Haas, H. Gold, A. Haase, G. Jakopic, G. Leising, N. Koch, S. Rentenberger, E. Zojer, Adv. Funct. Mater. 2007, 17, 2687. 16 information from Kanto chemical Co. Ltd, for example, http://www.kanto.co.jp/times/pdf/CT_193_3.pdf (written in Japanese), and JP patent P2007–16259A. 17S. Luan, G. W. Neudeck, J. Appl. Phys. 1992, 72, 766. 18H. Matsui, J. Takeya, private communication. 19 Detailed description will appear inT. Uemura, K. Nakayama, N. Nanba, Y. Kanaoka, M. Uno, J. Takeya, to be submitted. Citing Literature Volume1, Issue5August, 20141300124 ReferencesRelatedInformation
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