Sample current maximum at the critical angle of x-ray total reflection
1993; American Institute of Physics; Volume: 63; Issue: 2 Linguagem: Inglês
10.1063/1.110363
ISSN1520-8842
AutoresJun Kawai, Shinjiro Hayakawa, Setsuo Suzuki, Yoshinori Kitajima, Y. Takata, Teruo Urai, Kuniko Meaeda, Masanori Fujinami, Yoshihiro Hashiguchi, Yohichi Gohshi,
Tópico(s)X-ray Spectroscopy and Fluorescence Analysis
ResumoThe x-ray photoemitted electron intensity and sample current of a GaAs wafer are measured at 2 and 3 keV excitation photon energies while varying the glancing angle of the incident x rays. It is found that the sample current and the x-ray photoemitted electron intensity have similar behavior with respect to the glancing angle. The sample current as well as the photoemission intensity have a maximum at the critical angle of the x-ray total reflection. This is the first report of the observation of the existence of a sample current maximum at the critical angle of x-ray total reflection.
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