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A 0.13 μm CMOS System-on-Chip for a 512 × 424 Time-of-Flight Image Sensor With Multi-Frequency Photo-Demodulation up to 130 MHz and 2 GS/s ADC

2014; Institute of Electrical and Electronics Engineers; Volume: 50; Issue: 1 Linguagem: Inglês

10.1109/jssc.2014.2364270

1558-173X

Cyrus Bamji, Patrick A. O’Connor, Tamer A. Elkhatib, Swati Mehta, Barry Thompson, Lawrence A. Prather, Dane Snow, Onur Can Akkaya, Andy Daniel, Andrew D. Payne, Travis Perry, Mike Fenton, V. W. S. Chan,

Integrated Circuits and Semiconductor Failure Analysis

We introduce a 512 × 424 time-of-flight (TOF) depth image sensor designed in a TSMC 0.13 μm LP 1P5M CMOS process, suitable for use in Microsoft Kinect for XBOX ONE. The 10 μm × 10 μm pixel incorporates a TOF detector that operates using the quantum efficiency modulation (QEM) technique at high modulation frequencies of up to 130 MHz, achieves a modulation contrast of 67% at 50 MHz and a responsivity of 0.14 A/W at 860 nm. The TOF sensor includes a 2 GS/s 10 bit signal path, which is used for the high ADC bandwidth requirements of the system that requires many ADC conversions per frame. The chip also comprises a clock generation circuit featuring a programmable phase and frequency clock generator with 312.5-ps phase step resolution derived from a 1.6 GHz oscillator. An integrated shutter engine and a programmable digital micro-sequencer allows an extremely flexible multi-gain/multi-shutter and multi-frequency/multi-phase operation. All chip data is transferred using two 4-lane MIPI D-PHY interfaces with a total of 8 Gb/s input/output bandwidth. The reported experimental results demonstrate a wide depth range of operation (0.8–4.2 m), small accuracy error ( $<$ 1%), very low depth uncertainty ( $<$ 0.5% of actual distance), and very high dynamic range ( $>$ 64 dB).