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Nanometer Pattern Transfer by VUV Lithography with a D 2 Lamp

1990; Institute of Physics; Volume: 29; Issue: 11R Linguagem: Inglês

10.1143/jjap.29.2559

1347-4065

Katsuhiko Mutoh, Takashi Iwabuchi, Kazuhiro Kudo, Hisashi Watanabe, Yoshihiro Todokoro, Takeo Miyata, Reiji Sano,

Nanofabrication and Lithography Techniques

Vacuum-ultraviolet lithography of a trilayer resist system which consists of polymethyl methacrylate (PMMA), Si and polyimide has been studied using a deuterium lamp. The exposure dose needed for a 0.1-µm-thick PMMA film is less than 1 mJ/cm 2 , and a high etch rate ratio of 40 for polyimide to Si is obtained with the reactive ion beam etching (RIBE) technique. Using a simple contact exposure system and RIBE, photomask patterns are accurately transferred in the polyimide down to a linewidth of 0.2 µm, and 50-nm line patterns of polyimide are obtained.