W-doped anatase TiO2 transparent conductive oxide films: Theory and experiment
2010; American Institute of Physics; Volume: 107; Issue: 6 Linguagem: Inglês
10.1063/1.3326940
ISSN1520-8850
AutoresDe-ming Chen, Gang Xu, Lei Miao, Lihua Chen, Setsuo Nakao, Ping Jin,
Tópico(s)Gas Sensing Nanomaterials and Sensors
ResumoW-doped anatase TiO2 films were deposited on glass substrate by magnetron cosputtering. The minimum resistivity, 1.5×10−2 Ω cm, for Ti1−xWxO2 film (x=0.063) was obtained. X-ray photoelectron spectroscopy analysis shows W incorporated in the Ti lattice position is mostly in the W6+ state. Theoretical calculations based upon the density-functional theory were applied to analyze the electronic structure and conducting mechanism. The strong hybridization of Ti 3d states with W 5d states is the dominate factor to cause the shifting in Fermi level into conduction band. Our results suggest that tungsten is a favorable dopant to form TiO2-based transparent conducting oxide materials.
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