Portal de Periódicos da CAPES

Toward the development of a stable chemically amplified DUV positive photoresist

1992; SPIE; Volume: 1672; Linguagem: Inglês

10.1117/12.59722

1996-756X

James W. Thackeray, Diane L. Canistro, Mark Denison, Joseph J. Ferrari, Richard C. Hemond, David R. Medeiros, George W. Orsula, Edward K. Pavelchek, Martha M. Rajaratnam, Roger F. Sinta,

Advanced Memory and Neural Computing

This paper reports the initial results of an improved chemically amplified, positive-tone photoresist for use in DUV applications. This photoresist is shown to have the following properties: low absorbance at 248 nm (0.22/micrometers ), high resolution (0.35 micrometers lines and spaces in 1.0 micrometers thick resist), and good environmental stability. The resist did not show evidence of `T-tops' nor did any linewidth change occur over a five hour period.