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Silicon molecular-beam epitaxy

1984; Institution of Engineering and Technology; Volume: 30; Issue: 11-12 Linguagem: Inglês

10.1049/ep.1984.0468

2053-7883

R. A. A. Kubiak, E. H. C. Parker,

Silicon and Solar Cell Technologies

Epitaxial silicon is being used increasingly in many semiconductor devices, and is a major contender for use in VLSI and VHSIC technologies. Molecular-beam epitaxy is a new technique for growing epitaxial silicon at low temperatures which permits unprecedented control over doping profiles