XPS characterization of nitrogen implanted silicon carbide
1992; Elsevier BV; Volume: 65; Issue: 1-4 Linguagem: Inglês
10.1016/0168-583x(92)95065-y
ISSN1872-9584
AutoresAiko Nakao, M. Iwaki, Hideo Sakairi, K. Terasima,
Tópico(s)Metal and Thin Film Mechanics
ResumoA study has been made of the surface hardness and chemical structure of nitrogen implanted SiC. Implantations of 150 keV N2+ ions were carried out with doses ranging from 5 × 1016 to 1 × 1018 ions/cm2. Microhardness tests showed that N implantations made the near-surface area soften. The depth profile and chemical bonding stales of elements in implanted SiC were investigated by XPS (X-ray photoelectron spectroscopy) combined with Ar1 sputtering. The depth of the maximum nitrogen concentration moved toward the surface as the dose increased. The binding energies related to Si2p and C1s changed according to the N concentration. The Si2p spectra implied the formation of SixCyNz.
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