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Electrical and optical properties of GaN studied by surface photovoltage and photoluminescence

2011; Wiley; Volume: 8; Issue: 7-8 Linguagem: Inglês

10.1002/pssc.201000946

1862-6351

M. Foussekis, A. A. Baski, M. A. Reshchikov,

Plasma Diagnostics and Applications

Abstract We have studied the electrical and optical properties of undoped and Si‐doped n ‐type GaN layers grown on c ‐plane sapphire by Kelvin probe and photoluminescence (PL) techniques. The maximum SPV value of ∼0.7 eV indicates that the band bending decreased by this amount. The PL intensity depended on ambient and surface treatments such as cleaning, storage in air ambient, and extended UV exposure. Interestingly, variations in PL intensity, at least for n ‐type GaN, were too large to be explained solely by changes in depletion region width under illumination. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)