Photoresponse Properties of Polycrystalline BaSi 2 Films Grown on SiO 2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
2009; Institute of Physics; Volume: 2; Linguagem: Inglês
10.1143/apex.2.051601
ISSN1882-0786
AutoresDai Tsukada, Yuta Matsumoto, Ryo Sasaki, Michitoshi Takeishi, Takanobu Saito, Noritaka Usami, Takashi Suemasu,
Tópico(s)Semiconductor materials and devices
ResumoPolycrystalline BaSi2 layers with 300 nm thickness were grown by molecular beam epitaxy on (111)-oriented 100-nm-thick polycrystalline Si layers fabricated by an aluminum-induced crystallization method on SiO2. Photocurrents were clearly observed for photons with energies greater than 1.25 eV when bias voltage was applied between the 1.5-mm-spacing striped Al electrodes formed on the surface. The photoresponsivity increased sharply with increasing photon energy, attaining a maximum at approximately 1.60 eV. The external quantum efficiency increased with the bias voltage and reached approximately 8% at 5 V. This value is larger than that obtained for BaSi2 epitaxial films on Si(111).
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