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CXXXII. The generation of lattice defects by moving dislocations, and its application to the temperature dependence of the flow-stress of F.C.C. crystals

1955; Taylor & Francis; Volume: 46; Issue: 382 Linguagem: Inglês

10.1080/14786441108520632

1941-5990

Alfred Seeger,

Advanced materials and composites

Summary The present paper treats in some detail the various mechanisms by which lattice defects are formed by moving dislocations. Particular attention is paid to the role of thermal energy in these processes and to the special features of extended dislocations in metals with low stacking fault energies. The results are applied to the temperature dependence of flow stress of such metals and are found to explain the temperature dependence observed in Cu quantitatively. Cu is known to have a low stacking fault energy. It is possible to deduce details about the mechanism of plastic deformation, in particular of the role played by the edge and the screw parts of dislocation rings under various conditions. The predictions of the theory on the nature of the lattice defects causing the increase of electrical resistance during cold work are shown to be borne out by recovery experiments.