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MBE grown GaAs on GaAs (001): UHV X-ray diffraction measurements

1992; IOP Publishing; Volume: 4; Issue: 17 Linguagem: Inglês

10.1088/0953-8984/4/17/001

1361-648X

R Blöch, L. Brügemann, W. Press, Metin Tolan, Karin Behrens, J. Olde, M. Skibowski,

Semiconductor Quantum Structures and Devices

MBE grown gallium arsenide crystals with (001) orientation were investigated with a three-crystal X-ray diffractometer under UHV conditions. In the region of total external reflection (Q<0.3AA-1) no Kiessig fringes occur and hence no electron density difference between the substrate and the MBE layer exists. In the tails of the 004 Bragg reflection, modulations are observed. They are ascribed to a phase shift at the substrate-layer interface originating from a misfit parallel to the surface normal or a thin intermediate layer. The method can be applied to other thin film systems like oxidized or buried layers.