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Ce3Bi4Pt3 and hybridization Gap physics

1992; Elsevier BV; Volume: 181; Issue: 1-2 Linguagem: Inglês

10.1016/0925-8388(92)90333-5

1873-4669

Z. Fisk, P. C. Canfield, J. D. Thompson, M. F. Hundley,

Advanced Thermoelectric Materials and Devices

Basic thermodynamic and transport properties of Ce3Bi4Pt3 are reviewed. Although the susceptibility displays a canonical mixed valence temperature dependence, the electrical resistance, thermoelectric power and specific heat are those associated with a small gap semiconductor in which the gap is due to hybridization of the renormalized f and conduction electrons. In addition to this, a surprising correlation between the magnetic susceptibility and the thermal expansion as well as a simple theoretical framework within which hybridization-gapped systems can be viewed are presented.