Spin-Driven Resistance in Organic-Based Magnetic Semiconductor V[TCNE]x
2002; Volume: 14; Issue: 17 Linguagem: Inglês
10.1002/1521-4095(20020903)14
ISSN1521-4095
AutoresV. N. Prigodin, N. P. Raju, Konstantin Pokhodnya, Julius Summer Miller, A. J. Epstein,
Tópico(s)Molecular Junctions and Nanostructures
ResumoThe existence of spin polarized sub-bands, a half-semiconducting state in which the electron spins in “valence” and “conduction” bands are oppositely polarized, has been derived for the vanadium-organyl-based “soft” ferrimagnet V(TCNE)x by measurements of its electrical and magnetic resistance at different temperatures. The Figure shows a schematic of a level diagram for the system investigated.
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