Monolayer overgrowth in heteroepitaxy of chalcogenide compounds with NaCl- and distorted NaCl-structures
1974; Elsevier BV; Volume: 24-25; Linguagem: Inglês
10.1016/0022-0248(74)90324-8
ISSN1873-5002
AutoresKatsumichi Yagi, Kunio Takayanagi, Yoshiaki Matsushita, Goro Honjo,
Tópico(s)Nonlinear Optical Materials Research
ResumoMonolayer overgrowth of thin is found to take place in a characteristic way during heteroepitaxy of chalcogenide compounds in the case of deposit-substrate combination of different symmetry. The lattice transformation of the film from the initially pseudomorphic structure to the natural structure proceeds by the formation of sets of appropriately-oriented misfit dislocations (MD's) of different density. The method of identification of the growth mode, coherency between the overgrowth and substrate lattices and configuration and formation mechanism of MD's are discussed in comparison with the case of simple monolayer overgrowth without lattice transformation and the case involving nucleation and growth.
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