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Analytical model of 6H-SiC MOSFET

2003; Elsevier BV; Volume: 65; Issue: 4 Linguagem: Inglês

10.1016/s0167-9317(03)00053-4

1873-5568

Anil Kumar, Navneet Kaushik, Subhasis Haldar, Mridula Gupta, R.S. Gupta,

Advancements in Semiconductor Devices and Circuit Design

An analytical model of 6H-SiC inversion channel MOSFET is developed incorporating the influence of incomplete dopant ionization. The charge sheet approach is used to evaluate the drain current, transconductance and drain conductance. Maximun transconductance of 46 µS is obtained for Vds = 50 mV at a gate voltage of 2.3 V. An explicit analytical expression is also developed which relate the transconductance with interface trap density. It is observed that interface state density has an effect of lowering the transconductance. Some of the results obtained are verified with the experimental data. The interface trap density effects on other device characteristics has also been discussed.