A technique for directly plotting the inverse doping profile of semiconductor wafers
1969; Institute of Electrical and Electronics Engineers; Volume: 16; Issue: 5 Linguagem: Inglês
10.1109/t-ed.1969.16775
ISSN1557-9646
Autores Tópico(s)Optical Coatings and Gratings
ResumoA new technique for plotting doping profiles of semiconductor wafers is described. This technique involves driving a Schottky diode deposited on the surface with a small constant RF current (a few hundred microamperes at 5 MHz). The depth of the depletion layer is varied by changing the dc bias, but this is the only role of the dc voltage. The inverse doping profile n -1 (x) is obtained by monitoring the voltage across the diode at the fundamental frequency, which is proportional to the depth x, and the second harmonic voltage, which is proportional to n -1 . This type of plotter has the advantages of simplicity, high resolution (limited only by the Debye length in most cases), immediate results, and economy.
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