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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

2009; American Institute of Physics; Volume: 94; Issue: 4 Linguagem: Inglês

10.1063/1.3077188

1520-8842

Jie Sun, Marcus Larsson, Ivan Maximov, H. Hardtdegen, H. Q. Xu,

Advancements in Semiconductor Devices and Circuit Design

Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-κ HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.