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Oxidation of thin CrN and Cr2N films analyzed via nuclear reaction analysis and Rutherford backscattering spectrometry

1994; Elsevier BV; Volume: 245; Issue: 1-2 Linguagem: Inglês

10.1016/0040-6090(94)90868-0

1879-2731

T. Kacsich, Klaus‐Peter Lieb,

Metal and Thin Film Mechanics

CrN and Cr2N layers of 130–250 nm thickness were deposited onto silicon substrates via reactive magnetron sputtering. Their oxidation at 500–800 °C in air was studied via depth profiling nuclear methods. The Cr and N concentration profiles were determined by Rutherford backscattering spectrometry and resonant nuclear reaction analysis, respectively. In the case of oxidizing Cr2N, the nitrogen content behind the Cr2O3/Cr2N interface increases to the stoichiometry of CrN. At a Cr2O3 layer thickness of about half the as-deposited Cr2N layer, the oxidation rate is reduced to that fo CrN.